Intrinsic delay of permeable base transistor

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891231· OSTI ID:22308562

Chen, Wenchao; Guo, Jing ^[1]; So, Franky ^[2]

---

1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

• OSTI ID: 22308562
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CARRIERS
DIFFUSION BARRIERS
DIFFUSION EQUATIONS
FINITE ELEMENT METHOD
GALLIUM
GHZ RANGE
INDIUM
POISSON EQUATION
SCHOTTKY BARRIER DIODES
THICKNESS
THREE-DIMENSIONAL CALCULATIONS
VACUUM COATING
ZINC OXIDES