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Title: On the transmission of terahertz radiation through silicon-based structures

We report on the transmission of a terahertz (THz) radiation through prototype structures based on a p-type silicon substrate. In particular, the bare substrate and progressively more complicated multilayer structures were investigated, allowing to address the effect on the transmission of different factors, such as the orientation of interdigitated contacts with respect to the polarized beam, the temperature, and the current flowing through a conductive SnO{sub 2} nanorods layer. A suitable experimental set-up was developed for the direct spectral measurement of transmission in the range of 0.75–1.1 THz at room and low temperatures. A simple Drude-Lorentz model was formulated, finding a quantitative agreement with the experimental transmission spectrum of the bare substrate at room temperature. For the multilayer structures, the spectra variations observed with temperature are well accounted by the corresponding change of the mobility of holes in the silicon p-type substrate. The influence of the contact orientation is consistent with that of a polarizing metallic grating. Finally, Joule heating effects are observed in the spectra performed as a function of the current flowing through the SnO{sub 2} nanorods layer. The experimental results shown here, together with their theoretical interpretation, provide insights for the development of devices fabricated on conductivemore » substrates aimed to absorb/modulate radiation in the THz range.« less
Authors:
; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Institute for Microelectronics and Microsystems–Unit of Lecce, National Council of Research (IMM-CNR), Via Monteroni, Lecce 73100 (Italy)
  2. Institut d'Electronique du Sud, CNRS UMR 5214, TeraLab, University Montpellier 2, Montpellier (France)
  3. Department of Theoretical Physics, Institute of Semiconductor Physics, Kiev 03028 (Ukraine)
Publication Date:
OSTI Identifier:
22308561
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; CURRENTS; HOLES; JOULE HEATING; LAYERS; MOBILITY; NANOPARTICLES; NANOSTRUCTURES; POLARIZED BEAMS; P-TYPE CONDUCTORS; SILICON; SPECTRA; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THZ RANGE; TIN OXIDES; TRANSMISSION; VARIATIONS