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Title: Tunable electronic structures of p-type Mg doping in AlN nanosheet

The p-type impurity properties are investigated in the Mg-doped AlN nanosheet by means of first-principles calculations. Numerical results show that the transition energy levels reduce monotonously with the increase in Mg doping concentration in the Mg-doped AlN nanosheet systems, and are lower than that of the Mg-doped bulk AlN case for the cases with larger doping concentration. Moreover, Mg substituting Al atom is energy favorably under N-rich growth experimental conditions. These results are new and interesting to further improve p-type doping efficiency in the AlN nanostructures.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, Henan Normal University, Xinxiang, Henan 453007 (China)
  2. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)
Publication Date:
OSTI Identifier:
22308554
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; DOPED MATERIALS; EFFICIENCY; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; IMPURITIES; MAGNESIUM ADDITIONS; NANOSTRUCTURES; P-TYPE CONDUCTORS