Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films
- Department of Physics, National Taiwan Normal University, 11677 Taipei City, Taiwan (China)
- Experimentalphysik, Universität Duisburg-Essen, 47057 Duisburg (Germany)
- Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum (Germany)
- Department of Physics, National Taiwan University, 10617 Taipei City, Taiwan (China)
- Centre de Recherche sur l'Hétéroépitaxie et ses Application, 06560 Valbonne, UPR-CNRS (France)
Samarium ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range from 1 × 10{sup 14} to 1 × 10{sup 16 }cm{sup −2}. Structural properties studied by x-ray diffraction and Raman-scattering spectroscopy revealed Sm incorporation into GaN matrix without secondary phase. The optical measurements showed that the band gap and optical constants changed very slightly by the implantation. Photoluminescence measurements showed emission spectra similar to p-type GaN for all samples. Magnetic investigations with a superconducting quantum interference device identified magnetic ordering for Sm dose of and above 1 × 10{sup 15 }cm{sup −2} before thermal annealing, while ferromagnetism was only observed after thermal annealing from the sample with highest Sm dose. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.
- OSTI ID:
- 22308542
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL STRUCTURE
EMISSION SPECTRA
FERROMAGNETISM
GALLIUM NITRIDES
ION BEAMS
ION IMPLANTATION
KEV RANGE 100-1000
MAGNETIC PROPERTIES
MAGNETIZATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
RAMAN EFFECT
SAMARIUM IONS
SPECTROSCOPY
SQUID DEVICES
THIN FILMS
X-RAY DIFFRACTION