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Title: Electric field induced oscillating electron mobility in asymmetric wide GaAs/Al{sub x}Ga{sub 1−x}As quantum well structure

For the first time, we show that an oscillatory enhancement of low temperature electron mobility μ can be achieved in an asymmetric GaAs/Al{sub x}Ga{sub 1−x}As wide quantum well structure by applying an external electric field F perpendicular to the interface plane. We show that the oscillating nature of μ as a function of F is mostly due to the contribution of the higher subband through intersubband effects when there is double subband occupancy. We further show that the wavy nature of μ can be enhanced by increasing the well width, surface electron density, and also by considering a double quantum well structure. Our results can be utilized for low temperature device applications.
Authors:
 [1] ;  [2]
  1. Department of Electronic Science, Berhampur University, Berhampur 760 007, Odisha (India)
  2. Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur 761 008, Odisha (India)
Publication Date:
OSTI Identifier:
22308530
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; ASYMMETRY; ELECTRIC FIELDS; ELECTRON DENSITY; ELECTRON MOBILITY; GALLIUM ARSENIDES; INTERFACES; QUANTUM WELLS; SURFACES; X-RAY SPECTROSCOPY