Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891463· OSTI ID:22308524

Pezzoli, F.; Grilli, E. ^[1]; Isa, F.; Chrastina, D.; Isella, G. ^[2]; Müller Gubler, E. ^[3]

---

1. L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy)
2. L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy)
3. Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3 μm thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3 × 10{sup 7 }cm{sup −2} and an interdiffusion layer at the well/barrier interface of 2.1 nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

• OSTI ID: 22308524
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ATOMIC FORCE MICROSCOPY
BUFFERS
CRYSTAL DEFECTS
CRYSTAL GROWTH
DISLOCATIONS
EPITAXY
GERMANIUM
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
INTERFACES
LAYERS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
SILICON COMPOUNDS
SPECTRA
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION