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Title: Lattice thermal conductivity of crystalline and amorphous silicon with and without isotopic effects from the ballistic to diffusive thermal transport regime

Thermal conductivity of a material is an important physical parameter in electronic and thermal devices, and as the device size shrinks down, its length-dependence becomes unable to be neglected. Even in micrometer scale devices, materials having a long mean free path of phonons, such as crystalline silicon (Si), exhibit a strong length dependence of the thermal conductivities that spans from the ballistic to diffusive thermal transport regime. In this work, through non-equilibrium molecular-dynamics (NEMD) simulations up to 17 μm in length, the lattice thermal conductivities are explicitly calculated for crystalline Si and up to 2 μm for amorphous Si. The Boltzmann transport equation (BTE) is solved within a frequency-dependent relaxation time approximation, and the calculated lattice thermal conductivities in the BTE are found to be in good agreement with the values obtained in the NEMD. The isotopic effects on the length-dependent lattice thermal conductivities are also investigated both in the crystalline and amorphous Si.
Authors:
; ;  [1] ;  [2]
  1. Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22308521
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; APPROXIMATIONS; BOLTZMANN EQUATION; CRYSTALS; DIFFUSION; EQUILIBRIUM; FREQUENCY DEPENDENCE; ISOTOPE EFFECTS; MEAN FREE PATH; MOLECULAR DYNAMICS METHOD; PHONONS; RELAXATION TIME; SILICON; SIMULATION; THERMAL CONDUCTIVITY