Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping
- Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433 (China)
We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce{sup 3+} ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm{sup 2} pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce{sup 3+} ion doping; gains after loss corrections were between 89.52 and 341.95 cm{sup −1}; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm{sup 2} power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.
- OSTI ID:
- 22308519
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂
Photosensitized generation of singlet oxygen in porous silicon studied by simultaneous measurements of luminescence of nanocrystals and oxygen molecules