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Title: Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce{sup 3+} ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm{sup 2} pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce{sup 3+} ion doping; gains after loss corrections were between 89.52 and 341.95 cm{sup −1}; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm{sup 2} power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.
Authors:
; ; ; ;  [1] ;  [1] ;  [2]
  1. Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22308519
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CERIUM ADDITIONS; CORRECTIONS; DE-EXCITATION; EXCITATION; HYDROGENATION; LASER RADIATION; LIFETIME; LOSSES; NANOMATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POWER DENSITY; SILICON