Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4890309· OSTI ID:22308507

Ribet-Mohamed, I.; Jaeck, J.; Viale, T.; Haïdar, R. ^[1]; Taalat, R.; Delmas, M.; Rodriguez, J. -B.; Christol, P. ^[2]; Steveler, E.; Bardou, N. ^[3]; Boulard, F. ^[4]

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1. ONERA, DOTA, Chemin de la Hunière, 91761 Palaiseau Cedex (France)
2. Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5 (France)
3. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France)
4. CEA, LETI, MINATEC Campus, 17 Avenue des martyrs, 38054 Grenoble (France)

We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100 nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 μm window equal to 42% for U{sub bias} = −0.1 V, 77 K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

• OSTI ID: 22308507
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
DIFFUSION LENGTH
ELECTRIC POTENTIAL
GALLIUM ANTIMONIDES
ILLUMINANCE
INDIUM ARSENIDES
INFRARED RADIATION
MODULATION
PHOTODETECTORS
PHOTODIODES
QUANTUM EFFICIENCY
REFLECTION
SUPERLATTICES
TRANSFER FUNCTIONS