skip to main content

Title: Investigation of the Mn{sub 3−δ}Ga/MgO interface for magnetic tunneling junctions

The Mn{sub 3}Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque magnetoresistive memories. Mn–Ga films exhibits perpendicular magnetic anisotropy and high spin polarization and can be used to improve the performance of MgO-based magneto tunneling junctions. The interface between Mn–Ga and MgO films were chemically characterized by hard x-ray photoelectron spectroscopy. The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. We show that the deposition of few monoatomic layers of Mg on top of Mn–Ga film, before the MgO deposition, strongly suppresses the oxidation of gallium.
Authors:
; ; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Strasse 40, 01187 Dresden (Germany)
  2. WPI Advanced Institute for Materials Research, Tohoku University, 980-8577 Sendai (Japan)
  3. JASRI, SPring-8, Sayo-cho, Hyogo 679-5198 (Japan)
Publication Date:
OSTI Identifier:
22308502
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; BINARY ALLOY SYSTEMS; DEPOSITION; ELECTRIC CONTACTS; FILMS; GALLIUM COMPOUNDS; HARD X RADIATION; HEUSLER ALLOYS; INTERFACES; LAYERS; MAGNESIUM OXIDES; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; OXIDATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SPIN ORIENTATION; TUNNEL DIODES; TUNNEL EFFECT