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Title: Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Center for Microtechnologies, Chemnitz University of Technology, Chemnitz 09126 (Germany)
  2. Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz 09126 (Germany)
  3. (ENAS), Chemnitz 09126 (Germany)
Publication Date:
OSTI Identifier:
22308488
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM NITRIDES; FINITE ELEMENT METHOD; LASER RADIATION; LAYERS; MAGNETRONS; MEMBRANES; PIEZOELECTRICITY; PULSES; SILICON; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION