Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4887799· OSTI ID:22308488

Kaufmann, C.; Hahn, R.; Schulze, R. ^[1]; Billep, D. ^[2]; Gessner, T. ^[1]

---

1. Center for Microtechnologies, Chemnitz University of Technology, Chemnitz 09126 (Germany)
2. Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz 09126 (Germany)

Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

• OSTI ID: 22308488
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM NITRIDES
FINITE ELEMENT METHOD
LASER RADIATION
LAYERS
MAGNETRONS
MEMBRANES
PIEZOELECTRICITY
PULSES
SILICON
SPUTTERING
THIN FILMS
X-RAY DIFFRACTION