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Title: Depth profile reconstructions of electronic transport properties in H{sup +} MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

A depth profiling technique using photocarrier radiometry (PCR) is demonstrated and used for the reconstruction of continuously varying electronic transport properties (carrier lifetime and electronic diffusivity) in the interim region between the ion residence layer and the bulk crystalline layer in H{sup +} implanted semiconductor wafers with high implantation energies (∼MeV). This defect-rich region, which is normally assumed to be part of the homogeneous “substrate” in all existing two- and three-layer models, was sliced into many virtual thin layers along the depth direction so that the continuously and monotonically variable electronic properties across its thickness can be considered uniform within each virtual layer. The depth profile reconstruction of both carrier life time and diffusivity in H{sup +} implanted wafers with several implantation doses (3 × 10{sup 14}, 3 × 10{sup 15}, and 3 × 10{sup 16} cm{sup −2}) and different implantation energies (from 0.75 to 2.0 MeV) is presented. This all-optical PCR method provides a fast non-destructive way of characterizing sub-surface process-induced electronic defect profiles in devices under fabrication at any intermediate stage before final metallization and possibly lead to process correction and optimization well before electrical testing and defect diagnosis becomes possible.
Authors:
; ;  [1] ;  [2]
  1. Institute of Modern Optical Technologies and Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Lab of Advanced Optical Manufacturing Technologies and MOE Key Lab of Modern Optical Technologies, Soochow University, Suzhou 215006 (China)
  2. Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Ontario M5S 3G8 (Canada)
Publication Date:
OSTI Identifier:
22308474
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER LIFETIME; CARRIERS; CORRECTIONS; CRYSTAL DEFECTS; DEPTH; HYDROGEN IONS 1 PLUS; LAYERS; MEV RANGE; N-TYPE CONDUCTORS; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; POLYMERASE CHAIN REACTION; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES; THICKNESS; THIN FILMS