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Title: Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6]
  1. SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751 005 (India)
  2. Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India)
  3. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)
  4. Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)
  5. Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India)
  6. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
Publication Date:
OSTI Identifier:
22308466
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; CORRELATIONS; DEFECTS; GALLIUM ANTIMONIDES; INCIDENCE ANGLE; ION IMPLANTATION; KEV RANGE 10-100; LAYERS; MICROSTRUCTURE; MODIFICATIONS; PHOTOLUMINESCENCE; POROUS MATERIALS; RAMAN EFFECT; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY