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Title: Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 °C leads to a fairly homogeneous doping level of ≥4 × 10{sup 19} cm{sup −3} throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 °C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ≤6 × 10{sup 13} cm{sup −2}. Doping levels of (0.5–3.5) × 10{sup 19} cm{sup −3} are induced at the Si substrate surface by both boron and phosphorus-doped a–SiC:H. When the Si substrate is doped oppositemore » to the a-SiC:H p–n junctions are induced at a depth of 0.9–1.4 μm within the Si substrate for substrate resistivities of 1–10 Ω cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 °C, albeit at the expense of reduced crystallinity.« less
Authors:
 [1] ;  [2] ; ; ;  [1] ; ;  [3] ;  [4]
  1. Fraunhofer-Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)
  2. (United Kingdom)
  3. CNR-IMM, Via Piero Gobetti 101, 40129 Bologna (Italy)
  4. Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH (United Kingdom)
Publication Date:
OSTI Identifier:
22308453
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; BORON ADDITIONS; CRYSTALLIZATION; DIFFUSION; DOPED MATERIALS; HYDROGEN ADDITIONS; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MATRIX MATERIALS; NANOSTRUCTURES; P-N JUNCTIONS; QUANTUM DOTS; SENSITIVITY; SILICON; SILICON CARBIDES; SOLAR CELLS; SUBSTRATES; SURFACES; TEMPERATURE RANGE 1000-4000 K