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Title: All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence

A new approach is demonstrated for investigating charge and spin diffusion as well as surface and bulk recombination in unpassivated doped semiconductors. This approach consists in using two complementary, conceptually related, techniques, which are time-resolved photoluminescence (TRPL) and spatially resolved microluminescence (μPL) and is applied here to p{sup +} GaAs. Analysis of the sole TRPL signal is limited by the finite risetime. On the other hand, it is shown that joint TRPL and μPL can be used to determine the diffusion constant, the bulk recombination time, and the spin relaxation time. As an illustration, the temperature variation of these quantities is investigated for p{sup +} GaAs.
Authors:
; ; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Physique de la matière condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)
  2. Université de Toulouse, INSA-CNRS-UPS, 31077 Toulouse Cedex (France)
  3. Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq (France)
Publication Date:
OSTI Identifier:
22308450
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE TRANSPORT; DIFFUSION; DOPED MATERIALS; GALLIUM ARSENIDES; PHOSPHORUS IONS; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS; RECOMBINATION; RELAXATION TIME; SEMICONDUCTOR MATERIALS; SPIN; TIME RESOLUTION