Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Journal Article · Wed Aug 20 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4893511· OSTI ID:22308263

Stepina, N. P.; Dvurechenskii, A. V.; Nikiforov, A. I. ^[1]; Moers, J.; Gruetzmacher, D. ^[2]

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1. Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
2. Institute of Bio- and Nanosystems, Forschungszentrum Julich GmbH 52425 Julich (Germany)

We study the evolution of electron transport in strongly localized mesoscopic system with quantum dots under small photon flux. Exploring devices with narrow transport channels lead to the observation of giant fluctuations of the photoconductance, which is attributed to the strong dependence of hopping current on the filling of dots by holes. In our experiments, single-photon mode operation is indicated by the linear dependence of the frequency of photo-induced fluctuations on the light intensity and the step-like response of conductance on the pulse excitation. The effect of the light wavelength, measurement temperature, size of the conductive channel on the device efficiency are considered.

• OSTI ID: 22308263
• Journal Information: AIP Conference Proceedings, Vol. 1610, Issue 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGED-PARTICLE TRANSPORT
ELECTRONS
EQUIPMENT
FLUCTUATIONS
HOLES
PHOTOCONDUCTIVITY
PHOTONS
QUANTUM DOTS
WAVELENGTHS