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Title: Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

We study the evolution of electron transport in strongly localized mesoscopic system with quantum dots under small photon flux. Exploring devices with narrow transport channels lead to the observation of giant fluctuations of the photoconductance, which is attributed to the strong dependence of hopping current on the filling of dots by holes. In our experiments, single-photon mode operation is indicated by the linear dependence of the frequency of photo-induced fluctuations on the light intensity and the step-like response of conductance on the pulse excitation. The effect of the light wavelength, measurement temperature, size of the conductive channel on the device efficiency are considered.
Authors:
; ;  [1] ; ;  [2]
  1. Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
  2. Institute of Bio- and Nanosystems, Forschungszentrum Julich GmbH 52425 Julich (Germany)
Publication Date:
OSTI Identifier:
22308263
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1610; Journal Issue: 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGED-PARTICLE TRANSPORT; ELECTRONS; EQUIPMENT; FLUCTUATIONS; HOLES; PHOTOCONDUCTIVITY; PHOTONS; QUANTUM DOTS; WAVELENGTHS