AC transport in p-Ge/GeSi quantum well in high magnetic fields
- A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
- National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States)
- Warwick SEMINANO R and D Center, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom)
- Laboratorium für Festkörperphysik ETH Zürich, CH-8093 Zürich (Switzerland)
The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.
- OSTI ID:
- 22308262
- Journal Information:
- AIP Conference Proceedings, Vol. 1610, Issue 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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