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Title: Low temperature transformation from antiferromagnetic to ferromagnetic order in impurity system Ge:As near the insulator-metal phase transition

The low-temperature transformation from antiparallel to parallel spin orientation in a nonmagnetic compensated system Ge:As semiconductor near the metal-insulator phase transition has been experimentally observed. This effect is manifested in the temperature dependences of the impurity magnetic susceptibility obtained by integration of the spin resonance absorption line. These dependences show that the spin density falls in the medium temperature range (10-100 K) and grows at low temperatures. The effect is confirmed by the specific temperature features of the g-factor and inverse magnetic susceptibility. As the relative content of a compensating impurity (gallium) is made lower than 0.7, the transition temperature begins to decrease and, at a degree of compensation < 0.3, falls outside the temperature range under study (i.e., below 2 K)
Authors:
; ; ; ;  [1] ;  [2]
  1. Ioffe Institute, 194021 St. Petersburg (Russian Federation)
  2. Ioffe Institute, 194021 St. Petersburg, Russia and Umea University, Universitetomradet 90187, Umea (Sweden)
Publication Date:
OSTI Identifier:
22308256
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1610; Journal Issue: 1; Conference: TIDS15: 15. international conference on transport in interacting disordered systems, Sant Feliu de Guixols (Spain), 1-5 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTIFERROMAGNETISM; GALLIUM; IMPURITIES; LANDE FACTOR; MAGNETIC SUSCEPTIBILITY; PHASE TRANSFORMATIONS; RESONANCE ABSORPTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K