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Title: Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.
Authors:
; ; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  2. (China)
  3. Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States)
Publication Date:
OSTI Identifier:
22308218
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; COUPLING; ELECTRIC POTENTIAL; EQUIPMENT; EVALUATION; FLUCTUATIONS; GALLIUM ARSENIDES; NANOELECTRONICS; NANOFLUIDS; NANOTECHNOLOGY; QUANTUM DOTS; RESOURCE EXPLOITATION; SEMICONDUCTOR MATERIALS; SENSORS; STABILITY