Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
Journal Article
·
· Journal of Applied Physics
- Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)
- Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.
- OSTI ID:
- 22308214
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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