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Title: Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116, 104905 (2014)]

No abstract prepared.
Authors:
; ; ;  [1] ; ; ; ; ;  [2] ; ; ; ;  [3]
  1. Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York 11790 (United States)
  2. Dow Corning Compound Semiconductor Solutions, Midland, Michigan 48686 (United States)
  3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22308202
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; IMAGES; RESOLUTION; SILICON CARBIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY