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Title: Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.
Authors:
; ;  [1]
  1. ECE Department, Box 7911, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)
Publication Date:
OSTI Identifier:
22308197
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ELECTRON GAS; EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; LEAKAGE CURRENT; NITROGEN COMPOUNDS; SPACE CHARGE; SURFACES; TRAPS; TWO-DIMENSIONAL CALCULATIONS