Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

Journal Article · Tue Oct 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4900581· OSTI ID:22308197

Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L. ^[1]

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1. ECE Department, Box 7911, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

• OSTI ID: 22308197
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ELECTRON GAS
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
LAYERS
LEAKAGE CURRENT
NITROGEN COMPOUNDS
SPACE CHARGE
SURFACES
TRAPS
TWO-DIMENSIONAL CALCULATIONS