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Title: Influence of curvature on the device physics of thin film transistors on flexible substrates

Abstract

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.

Authors:
;  [1]
  1. Flexible Electronics Lab, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India)
Publication Date:
OSTI Identifier:
22308196
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BENDING; CAPACITANCE; ELASTOMERS; EQUIPMENT; INTERFACES; POISSON RATIO; SEMICONDUCTOR MATERIALS; SIMULATION; STRAINS; STRESSES; SUBSTRATES; THICKNESS; THIN FILMS; TRANSISTORS; VISIBLE RADIATION

Citation Formats

Amalraj, Rex, and Sambandan, Sanjiv. Influence of curvature on the device physics of thin film transistors on flexible substrates. United States: N. p., 2014. Web. doi:10.1063/1.4900440.
Amalraj, Rex, & Sambandan, Sanjiv. Influence of curvature on the device physics of thin film transistors on flexible substrates. United States. https://doi.org/10.1063/1.4900440
Amalraj, Rex, and Sambandan, Sanjiv. 2014. "Influence of curvature on the device physics of thin film transistors on flexible substrates". United States. https://doi.org/10.1063/1.4900440.
@article{osti_22308196,
title = {Influence of curvature on the device physics of thin film transistors on flexible substrates},
author = {Amalraj, Rex and Sambandan, Sanjiv},
abstractNote = {Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.},
doi = {10.1063/1.4900440},
url = {https://www.osti.gov/biblio/22308196}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 16,
volume = 116,
place = {United States},
year = {Tue Oct 28 00:00:00 EDT 2014},
month = {Tue Oct 28 00:00:00 EDT 2014}
}