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Title: Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22308195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; INTERFACES; NICKEL COMPOUNDS; NITROGEN IONS; N-TYPE CONDUCTORS; OXIDES; SEMICONDUCTOR MATERIALS; SILICIDES; SULFIDES; SURFACE TREATMENTS; TRANSMISSION ELECTRON MICROSCOPY