Photoresponse properties of large-area MoS{sub 2} atomic layer synthesized by vapor phase deposition

Journal Article · Tue Oct 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4898861· OSTI ID:22308181

Luo, Siwei; Qi, Xiang; Ren, Long; Hao, Guolin; Fan, Yinping; Liu, Yundan; Han, Weijia; Zang, Chen; Li, Jun; Zhong, Jianxin ^[1]

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1. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, People's Republic of China Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and Faculty of Materials and Optoelectronic Physics, Xiangtan University, Hunan 411105 (China)

Photoresponse properties of a large area MoS{sub 2} atomic layer synthesized by vapor phase deposition method without any catalyst are studied. Scanning electron microscopy, atomic force microscopy, Raman spectrum, and photoluminescence spectrum characterizations confirm that the two-dimensional microstructures of MoS{sub 2} atomic layer are of high quality. Photoelectrical results indicate that the as-prepared MoS{sub 2} devices have an excellent sensitivity and a good reproducibility as a photodetector, which is proposed to be ascribed to the potential-assisted charge separation mechanism.

• OSTI ID: 22308181
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CATALYSTS
DEPOSITION
LAYERS
MICROSTRUCTURE
MOLYBDENUM SULFIDES
PHOTOELASTICITY
PHOTOLUMINESCENCE
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SENSITIVITY