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Title: Direct observation of both contact and remote oxygen scavenging of GeO{sub 2} in a metal-oxide-semiconductor stack

In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al{sub 2}O{sub 3} layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.
Authors:
; ;  [1] ;  [2] ;  [3] ; ;  [2] ; ;  [4] ;  [5]
  1. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa (Israel)
  2. Laboratorio TASC/IOM-CNR, Area di ricerca, Trieste (Italy)
  3. (Slovenia)
  4. Imec, Kapeldreef 75, B-3001 Leuven (Belgium)
  5. Department of Electrical Engineering, Columbia University, New York, New York 10027 (United States)
Publication Date:
OSTI Identifier:
22308173
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANNEALING; DEPOSITION; GERMANATES; GERMANIUM OXIDES; INTERFACES; LAYERS; METALS; NANOELECTRONICS; REACTIVITY; RESOLUTION; SCALING; SCAVENGING; SEMICONDUCTOR MATERIALS; SURFACES; SYNCHROTRON RADIATION; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY