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Title: Oxygen-vacancy-induced room-temperature magnetization in lamellar V{sub 2}O{sub 5} thin films

In this work, we study the local atomic and electronic structures as well as oxygen-vacancy-induced magnetic properties of electrodeposited V{sub 2}O{sub 5} films. Unlike stoichiometric V{sub 2}O{sub 5}, which is a diamagnetic lamellar semiconductor, our oxygen-defective V{sub 2}O{sub 5} films are ferromagnetic at room-temperature and their saturation magnetization decreases with air exposure time. X-ray absorption spectroscopy was used to monitor the aging effect on these films, revealing that freshly-made samples exhibit only local crystalline order, whereas the aged ones undoubtedly show an enhancement of crystallinity and coordination symmetry. The mean number of oxygen atoms around V tends to increase, indicating a decrease of oxygen vacancies with time. Concurrently with the decrease of oxygen vacancies, a loss of saturation magnetization is also observed. Hence, it can be concluded that the ferromagnetism of the V{sub 2}O{sub 5} films originates from a vacancy-induced mechanism, confirming the universality of this class of ferromagnetism.
Authors:
 [1] ; ; ; ;  [2]
  1. Instituto Federal do Paraná (IFPR), Campus Paranaguá (Brazil)
  2. Departamento de Física, Universidade Federal do Paraná (UFPR), Curitiba (Brazil)
Publication Date:
OSTI Identifier:
22308161
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ATOMS; ELECTRODEPOSITION; ELECTRONIC STRUCTURE; FERROMAGNETISM; LOSSES; MAGNETIC PROPERTIES; MAGNETIZATION; OXYGEN; SATURATION; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SYMMETRY; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VACANCIES; X-RAY SPECTROSCOPY