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Title: Spectroscopic study of semipolar (112{sup ¯}2)-HVPE GaN exhibiting high oxygen incorporation

Spatially resolved luminescence and Raman spectroscopy investigations are applied to a series of (112{sup ¯}2)-GaN samples grown by hydride vapor phase epitaxy (HVPE) grown over an initial layer deposited by metal organic vapor phase epitaxy on patterned sapphire substrates. Whereas these two differently grown GaN layers are crystallographically homogeneous, they differ largely in their doping level due to high unintentional oxygen uptake in the HVPE layer. This high doping shows up in luminescence spectra, which can be explained by a free-electron recombination band for which an analytical model considering the Burstein-Moss shift, conduction band tailing, and the bandgap renormalization is included. Secondary ion mass spectrometry, Raman spectroscopy, and Hall measurements concordantly determine the electron density to be above 10{sup 19 }cm{sup −3}. In addition, the strain state is assessed by Raman spectroscopy and compared to a finite element analysis.
Authors:
 [1] ;  [2] ; ;  [1] ; ;  [3] ;  [4]
  1. Institute of Quantum Matter, Ulm University, 89081 Ulm (Germany)
  2. (Spain)
  3. Institute of Optoelectronics, Ulm University, 89081 Ulm (Germany)
  4. Scientific Computing Centre Ulm, Ulm University, 89081 Ulm (Germany)
Publication Date:
OSTI Identifier:
22308147
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON DENSITY; FINITE ELEMENT METHOD; GALLIUM NITRIDES; LAYERS; LUMINESCENCE; MASS SPECTROSCOPY; ORGANOMETALLIC COMPOUNDS; OXYGEN; RAMAN SPECTROSCOPY; RECOMBINATION; RENORMALIZATION; SAPPHIRE; SPECTRA; STRAINS; SUBSTRATES; VAPOR PHASE EPITAXY