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Title: X-ray μ-Laue diffraction analysis of Cu through-silicon vias: A two-dimensional and three-dimensional study

Here, white X-ray μ-beam Laue diffraction is developed and applied to investigate elastic strain distributions in three-dimensional (3D) materials, more specifically, for the study of strain in Cu 10 μm diameter–80 μm deep through-silicon vias (TSVs). Two different approaches have been applied: (i) two-dimensional μ-Laue scanning and (ii) μ-beam Laue tomography. 2D μ-Laue scans provided the maps of the deviatoric strain tensor integrated along the via length over an array of TSVs in a 100 μm thick sample prepared by Focused Ion Beam. The μ-beam Laue tomography analysis enabled to obtain the 3D grain and elemental distribution of both Cu and Si. The position, size (about 3 μm), shape, and orientation of Cu grains were obtained. Radial profiles of the equivalent deviatoric strain around the TSVs have been derived through both approaches. The results from both methods are compared and discussed.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ; ; ;  [1] ;  [2] ;  [3]
  1. Univ. Grenoble Alpes, F-38000 Grenoble (France)
  2. (France)
  3. ST Microelectronics, 850 Rue Jean Monnet, F-38920 Crolles (France)
Publication Date:
OSTI Identifier:
22308142
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; COPPER; DISTRIBUTION; ION BEAMS; ORIENTATION; SILICON; STRAINS; THREE-DIMENSIONAL CALCULATIONS; TOMOGRAPHY; TWO-DIMENSIONAL CALCULATIONS; X-RAY DIFFRACTION