Inhomogeneous broadening and peak shift of the 7.6 eV optical absorption band of oxygen vacancies in SiO{sub 2}
- Department of Applied Chemistry, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji 192-0397 (Japan)
- Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV1063 Riga (Latvia)
- Materials and Structures Laboratory and Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
The peak parameters of radiation-induced 7.6 eV optical absorption band of oxygen vacancies (Si-Si bonds) were examined for high-purity synthetic α-quartz and amorphous SiO{sub 2} (a‐SiO{sub 2}) exposed to {sup 60}Co γ-rays. The peak shape is asymmetric with the steeper edge at the lower energy side both in α-quartz and a‐SiO{sub 2}, and the peak energy is larger for α-quartz than that for a‐SiO{sub 2}. The full width at half maximum for a‐SiO{sub 2} is larger by ∼40-60% than that for α-quartz, and it increases with an increase in the disorder of the a‐SiO{sub 2} network, which is enhanced by raising the temperature of preannealing before irradiation, i.e., fictive temperature. These data are interpreted from the viewpoint of the site-to-site distribution of the Si-Si bond length in a‐SiO{sub 2}.
- OSTI ID:
- 22308123
- Journal Information:
- AIP Conference Proceedings, Vol. 1624, Issue 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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