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Title: Inhomogeneous broadening and peak shift of the 7.6 eV optical absorption band of oxygen vacancies in SiO{sub 2}

The peak parameters of radiation-induced 7.6 eV optical absorption band of oxygen vacancies (Si-Si bonds) were examined for high-purity synthetic α-quartz and amorphous SiO{sub 2} (a‐SiO{sub 2}) exposed to {sup 60}Co γ-rays. The peak shape is asymmetric with the steeper edge at the lower energy side both in α-quartz and a‐SiO{sub 2}, and the peak energy is larger for α-quartz than that for a‐SiO{sub 2}. The full width at half maximum for a‐SiO{sub 2} is larger by ∼40-60% than that for α-quartz, and it increases with an increase in the disorder of the a‐SiO{sub 2} network, which is enhanced by raising the temperature of preannealing before irradiation, i.e., fictive temperature. These data are interpreted from the viewpoint of the site-to-site distribution of the Si-Si bond length in a‐SiO{sub 2}.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Applied Chemistry, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji 192-0397 (Japan)
  2. Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV1063 Riga (Latvia)
  3. Materials and Structures Laboratory and Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
Publication Date:
OSTI Identifier:
22308123
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1624; Journal Issue: 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; AMORPHOUS STATE; ASYMMETRY; BOND LENGTHS; COBALT 60; EV RANGE; GAMMA RADIATION; IRRADIATION; OXYGEN; PHYSICAL RADIATION EFFECTS; QUARTZ; SILICON OXIDES; TEMPERATURE DEPENDENCE; VACANCIES