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Title: Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2},more » adducing independent support to the P{sub b0}{sup (211)} typification.« less
Authors:
;  [1]
  1. Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22308122
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1624; Journal Issue: 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ANISOTROPY; ATOMS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; HYPERFINE STRUCTURE; INTERFACES; RELAXATION; SILICON 29; SILICON OXIDES; SPIN; SYMMETRY; TEMPERATURE DEPENDENCE; ZEEMAN EFFECT