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Title: Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films

In this paper we present the results of optically stimulated electron emission (OSEE) investigation of thin SiO{sub 2} films implanted with Ge{sup +} ions. The emission models of Urbach rule and power Kane-dependence are used to fit OSEE spectra at different excitation energy ranges. The materials under study may find a number of technological applications in optical devices and ultraviolet sensors. Samples attestation was performed by electron microscopy and x-ray photoelectron spectroscopy (XPS). XPS data revealed strong dependence between the Si, Ge and O atoms state and annealing time. Observed correlations between parameter values of Urbach- and Kane-related models suggest the implantation-induced changeover of both the vibronic subsystem and energy band structure.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Ural Federal University, Mira street, 19, 620002, Ekaterinburg (Russian Federation)
  2. Institute of Physics, University of Rostock, Universitatsplatz 3, D-18051 Rostock (Germany)
  3. Research Center Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden (Germany)
Publication Date:
OSTI Identifier:
22308116
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1624; Journal Issue: 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CORRELATIONS; ELECTRON EMISSION; ELECTRON MICROSCOPY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; EXCITATION; GERMANIUM IONS; INTERFACES; ION IMPLANTATION; SENSORS; SILICON OXIDES; SURFACES; ULTRAVIOLET RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY