Luminescence of non-bridging oxygen hole centers in crystalline SiO{sub 2}
- Institute of Solid-State Physics, University of Latvia. Kengaraga iela 8, LV1063 Riga (Latvia)
- Department of Applied Chemistry, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397 (Japan)
- Materials and Structures Laboratory and Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
Oxygen dangling bonds (nonbridging oxygen hole centers, NBOHCs), which are characteristic to amorphous SiO{sub 2}, were studied in amorphized regions of neutron-irradiated α-quartz crystal and on their boundaries by time-resolved site-selective photoluminescence (PL) at 20K. Along with the usual disorder-broadened PL band of NBOHCs, sharp, 'crystal-like' zero-phonon lines (ZPLs), whose positions do not shift with the excitation wavelength, are observed. In addition to the previously reported NBOHCs with ZPL at 1.933 eV, a second sub-type of NBOHCs with ZPL at 1.883 eV is confirmed by observation of its vibrational sideband due to Si-(dangling O) stretching mode (897cm{sup −1}) under resonance 1.883eV excitation. A third sub-type of NBOHCs with an excitation energy at 1.879 eV, distinguished by a strong coupling to low-energy (66 cm{sup −1}) vibrational mode is found. This mode is weakly coupled also to the other two sub-types of NBOHCs.
- OSTI ID:
- 22308112
- Journal Information:
- AIP Conference Proceedings, Vol. 1624, Issue 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
EV RANGE
EXCITATION
HOLES
IRRADIATION
NEUTRON FLUENCE
OXYGEN
PHONONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
QUARTZ
SILICA
SILICON OXIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TIME RESOLUTION
VIBRATIONAL STATES