Raman measurements in silica glasses irradiated with energetic ions
- Materiales para Fusión, Laboratorio Nacional de Fusión, CIEMAT, Avda. Complutense, 40, 28040 Madrid (Spain)
- Laboratoire Hubert Curien, UMR CNRS 5516, Université Jean Monnet, Bâtiment F 18 Rue du Professeur Benoît Lauras F43000 Saint-Étienne, France and Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO) (France)
- Materiales para Fusión, Laboratorio Nacional de Fusión, CIEMAT, Avda. Complutense, 40, 28040 Madrid, Spain and Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain)
- Laboratoire Hubert Curien, UMR CNRS 5516, Université Jean Monnet, Bâtiment F 18 Rue du Professeur Benoît Lauras F43000 Saint-Étienne (France)
Ion irradiation with energetic He{sup +} (2.5 MeV), O{sup 4+} (13.5 MeV), Si{sup 4+} (24.4 MeV) and Cu{sup 7+} (32.6 MeV) species at several fluences (from 5 × 10{sup 12} to 1.65 × 10{sup 15} ion/cm{sup 2}) were performed in three types of SiO{sub 2} glasses with different OH content (KU1, KS-4V and Infrasil 301). After ion implantation the Raman spectra were measured and compared with the spectra of unirradiated samples. Irradiated samples of the three fused silica grades exhibit changes in the broad and asymmetric R-band (ω{sub 1} around 445 cm{sup −1}), in D{sub 1} (490 cm−1) and D{sub 2} (605 cm{sup −1}) bands associated to small-membered rings. The D{sub 2} band shows an increase with increasing fluences for different ions, indicating structural changes. Raman spectra of ion-irradiated samples were compared with the spectra of neutron irradiated samples at fluences 10{sup 17} n/cm{sup 2} and 1018 n/cm{sup 2}. Macroscopic surface cracking was detected, mainly at fluences corresponding to deposited energies between 10{sup 23} eV/cm{sup 3} and 10{sup 24} eV/cm{sup 3} (after ion beam shutdown)
- OSTI ID:
- 22308110
- Journal Information:
- AIP Conference Proceedings, Vol. 1624, Issue 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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