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Title: Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.
Authors:
;  [1] ;  [2]
  1. Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)
  2. Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India)
Publication Date:
OSTI Identifier:
22308046
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1620; Journal Issue: 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CADMIUM OXIDES; CHROMIUM COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EV RANGE; GLASS; GRAIN ORIENTATION; OPACITY; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; X-RAY DIFFRACTION