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Title: Studies on nickel-tungsten oxide thin films

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Physics, Alagappa University, Karaikudi - 630 004 (India)
  2. Directorate of Distance Education, Alagappa University, Karaikudi - 630 004 (India)
  3. Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)
Publication Date:
OSTI Identifier:
22308006
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1620; Journal Issue: 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EMISSION SPECTRA; ENERGY GAP; NICKEL; NICKEL TUNGSTATES; PHOTOLUMINESCENCE; RAMAN SPECTRA; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; TUNGSTEN; VACANCIES; X-RAY DIFFRACTION