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Title: Numerical design of SiC bulk crystal growth for electronic applications

Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.
Authors:
; ;  [1] ;  [2]
  1. Warsaw University of Technology, Faculty of Materials Science and Engineering, Woloska 141, 02507 Warsaw (Poland)
  2. Institute of Electronic Materials Technology, Wolczynska 133, 01919 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22307955
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1618; Journal Issue: 1; Conference: ICCMSE 2014: International conference on computational methods in science and engineering 2014, Athens (Greece), 4-7 Apr 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; ENERGY GAP; MONOCRYSTALS; NUMERICAL ANALYSIS; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; VAPORS