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Title: Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.
Authors:
;  [1]
  1. National Institute for Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)
Publication Date:
OSTI Identifier:
22307946
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1618; Journal Issue: 1; Conference: ICCMSE 2014: International conference on computational methods in science and engineering 2014, Athens (Greece), 4-7 Apr 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH IONS; COMPUTERIZED SIMULATION; ELECTRIC FIELDS; ENERGY LEVELS; GAUSS FUNCTION; IODINE IONS; ION IMPLANTATION; LAYERS; QUANTUM WELLS; SILICON; STRAINS; STRESSES; TEMPERATURE DEPENDENCE; TRAPPING; TRAPS