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Title: Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. CIMAP, UMR 6252 CNRS, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex (France)
  2. IEMN, UMR-CNRS 8520, CS 60069, 59652 Villeneuve d'Ascq Cedex (France)
Publication Date:
OSTI Identifier:
22307941
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1618; Journal Issue: 1; Conference: ICCMSE 2014: International conference on computational methods in science and engineering 2014, Athens (Greece), 4-7 Apr 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY; DISLOCATIONS; ELECTRON MICROSCOPY; ELECTRON MOBILITY; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; MOLECULAR DYNAMICS METHOD; PHASE STABILITY; TRANSISTORS