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Title: High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to −190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from −20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation)
  2. Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation)
  3. Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)
Publication Date:
OSTI Identifier:
22307886
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1616; Journal Issue: 1; Conference: CPV-10: 10. international conference on concentrator photovoltaic systems, Albuquerque, NM (United States), 7-9 Apr 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; GERMANIUM; HETEROJUNCTIONS; INDIUM PHOSPHIDES; INTERFACES; OPERATION; PERFORMANCE; SOLAR CELLS; SOLAR CONCENTRATORS; SOLAR RADIATION