AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

Journal Article · Fri Sep 26 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4897019· OSTI ID:22307884

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav ^[1]; Luque, Antonio ^[2]

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1. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation)
2. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (λ = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

• OSTI ID: 22307884
• Journal Information: AIP Conference Proceedings, Vol. 1616, Issue 1; Conference: CPV-10: 10. international conference on concentrator photovoltaic systems, Albuquerque, NM (United States), 7-9 Apr 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
14 SOLAR ENERGY
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
LASER RADIATION
LIQUID PHASE EPITAXY
MONOCHROMATIC RADIATION
OPERATION
PHOTOVOLTAIC EFFECT
SOLAR CELLS
SURFACES