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Title: Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

We present a quantitative analysis of Raman scattering in various Si/Si{sub 1-x}Ge{sub x} multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.
Authors:
;  [1] ; ; ;  [2]
  1. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States)
  2. National Research Council, Ottawa, Ontario K1A 0R6 (Canada)
Publication Date:
OSTI Identifier:
22306251
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COOLING; ENERGY LOSSES; GERMANIUM SILICIDES; HEAT TRANSFER; LAYERS; NANOSTRUCTURES; RAMAN EFFECT; SILICON; STRAINS; THERMAL DIFFUSIVITY; THERMAL EFFLUENTS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY