Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4886598· OSTI ID:22306251

Mala, S. A.; Lockwood, D. J.; Wu, X.; Baribeau, J. -M. ^[1]

---

1. National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

We present a quantitative analysis of Raman scattering in various Si/Si{sub 1-x}Ge{sub x} multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

• OSTI ID: 22306251
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COOLING
ENERGY LOSSES
GERMANIUM SILICIDES
HEAT TRANSFER
LAYERS
NANOSTRUCTURES
RAMAN EFFECT
SILICON
STRAINS
THERMAL DIFFUSIVITY
THERMAL EFFLUENTS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY