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Title: Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.
Authors:
 [1] ;  [2] ;  [3]
  1. Program of Physics and General Science, Faculty of Science and Technology, Songkhla Rajabhat University, Songkhla 90000 (Thailand)
  2. Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand)
  3. Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)
Publication Date:
OSTI Identifier:
22306221
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 85; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ALUMINIUM OXIDES; CHANNELING; MAGNETIC FIELDS; MICROWAVE RADIATION; PLASMA CONFINEMENT; PLASMA DENSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SURFACE COATING; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY