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Title: Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [2] ;  [4] ;  [5]
  1. Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
  3. Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
  4. (United States)
  5. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
Publication Date:
OSTI Identifier:
22306179
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BOUND STATE; CAPACITANCE; CORRELATIONS; CRYSTAL DEFECTS; DENSITY; DIELECTRIC MATERIALS; DISPERSIONS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SIMULATION; SUBSTRATES; SURFACES; TRAPS