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Title: Investigation of the GaN-on-GaAs interface for vertical power device applications

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.
Authors:
; ;  [1] ; ;  [2] ; ; ;  [3] ;  [4] ;  [5] ; ; ;  [6]
  1. H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)
  2. Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
  4. Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom)
  5. (United Kingdom)
  6. School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)
Publication Date:
OSTI Identifier:
22306178
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CONNECTORS; DENSITY; DIFFUSION; DISLOCATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ETCHING; GALLIUM ARSENIDES; GALLIUM NITRIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; PLASMA; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY