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Title: Field dependent emission rates in radiation damaged GaAs

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.
Authors:
; ; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
Publication Date:
OSTI Identifier:
22306176
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; DAMAGE; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRONS; EMISSION; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; RECOMBINATION; TEMPERATURE DEPENDENCE; TRAPS