Field dependent emission rates in radiation damaged GaAs

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4885156· OSTI ID:22306176

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

• OSTI ID: 22306176
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
DAMAGE
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRONS
EMISSION
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
RECOMBINATION
TEMPERATURE DEPENDENCE
TRAPS