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Title: Lattice parameters and Raman-active phonon modes of (In{sub x}Ga{sub 1–x})₂O₃ for x<0.4

We present X-ray diffraction and Raman spectroscopy investigations of (In{sub x}Ga{sub 1–x})₂O₃ thin films and bulk-like ceramics in dependence of their composition. The thin films grown by pulsed laser deposition have a continuous lateral composition spread allowing the determination of phonon mode properties and lattice parameters with high sensitivity to the composition from a single 2-in. wafer. In the regime of low indium concentration, the phonon energies depend linearly on the composition and show a good agreement between both sample types. We determined the slopes of these dependencies for eight different Raman modes. While the lattice parameters of the ceramics follow Vegard's rule, deviations are observed for the thin films. Further, we found indications of the high-pressure phase InGaO₃ II in the thin films above a critical indium concentration, its value depending on the type of substrate.
Authors:
; ; ; ; ; ;  [1]
  1. Institut für Experimentelle Physik II, Halbleiterphysik, Universität Leipzig, Linnéstr. 5, 04103 Leipzig (Germany)
Publication Date:
OSTI Identifier:
22306159
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CERAMICS; CONCENTRATION RATIO; ENERGY BEAM DEPOSITION; GALLIUM OXIDES; INDIUM OXIDES; LASER RADIATION; LATTICE PARAMETERS; PHONONS; PULSED IRRADIATION; RAMAN SPECTROSCOPY; SENSITIVITY; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION