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Title: Shockley-Read-Hall lifetimes in CdTe

A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is ~10⁻¹³ cm², which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap.
Authors:
;  [1] ;  [1] ;  [2]
  1. Microphysics Laboratory, University of Illinois-Chicago, Chicago Illinois 60607 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22306157
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; CAPTURE; CARRIER LIFETIME; COMPUTERIZED SIMULATION; CROSS SECTIONS; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; FERMI LEVEL; GREEN FUNCTION; HAMILTONIANS; HOLES; POINT DEFECTS; RECOMBINATION